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北京大学化学学院:《化学纳米材料》(英文版)Scanning Probe Lithography(SPL)

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Scanning Probe Lithography(SPL) Mechanical scratchin Anodization of si surface Electrochemical decomposition of self-assembled monolayer Electrofield induced chemical reaction Electrochemical reaction in solution using protected
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Scanning Probe Microscope(SPM) Lithography Or Scanning Probe Lithography (SPl) Scanning Probe Microscope tip, such as an Atomic Force Microscope(AFM)or Scanning Tunneling Microscope(STM)tip, is used to locally modify a surface, much like a pen or knife

Scanning Probe Microscope (SPM) Lithography Or Scanning Probe Lithography (SPL) A Scanning Probe Microscope tip, such as an Atomic Force Microscope (AFM) or Scanning Tunneling Microscope (STM) tip, is used to locally modify a surface, much like a pen or knife

Scanning Probe Lithography(SPL) Mechanical scratchin Anodization of si surface Electrochemical decomposition of self-assembled monolayer Electrofield induced chemical reaction Electrochemical reaction in solution using protected STM tips Optical or Optical-Assisted Lithography AFMDip-Pen Nanolithography DPN)

Scanning Probe Lithography (SPL) • Mechanical scratching •Anodization of Si surface • Electrochemical decomposition of self-assembled monolayer • Electrofield induced chemical reaction • Electrochemical reaction in solution using protected STM tips •Optical or Optical-Assisted Lithography • AFM Dip-Pen Nanolithography (DPN)

A 1 8 0 2 Llm Mechanical Modification of Surface modification by STM Surface with AFM Tip tip with a voltage and current line spacing is 3nm

Surface modification by STM tip with a voltage and current, line spacing is 3nm Mechanical Modification of Surface with AFM Tip

0 5nn Line pattern created by Surface oxidation of silicon NSOM-based Lithography surface by STM

Line pattern created by NSOM-based Lithography Surface oxidation of silicon surface by STM

A 0.20.406pum 35KX35,0001umWD16 Ag line obtained by electrochemical reduction SEM image of chromium of Agt in solution with Lines created by STM

Ag line obtained by electrochemical reduction of Ag+ in solution with STM SEM image of Chromium Lines created by…

Dip-Pen Nanolithography Dip-Pen Nanolithography DPN)is an AFM lithography technique where molecules are transported from AFM tip to surface to form nanostructures AFM Tip Water meniscus spontaneously condenses between AFM tip and surface, which facilitates transport of the molecules fron tip to surface. Deposition occurs due to Au subway surface affinity of the solutes. From Piner et al. Science 283 661. Previous efforts(by Chad Mirkin, NWU) serial patterning of alkanethiols on gold parallel patterning using several AFM tips patterning alkanethiol-based etch resists Patterning hexamethy ldithilathane on semiconductor surfaces

Dip-Pen Nanolithography Dip-Pen Nanolithography (DPN) is an AFM lithography technique where molecules are transported from AFM tip to surface to form nanostructures From Piner et. al, Science 283, 661. Water meniscus spontaneously condenses between AFM tip and surface, which facilitates transport of the molecules from tip to surface. Deposition occurs due to surface affinity of the solutes. Previous efforts (by Chad Mirkin, NWU): • serial patterning of alkanethiols on gold • parallel patterning using several AFM tips • patterning alkanethiol-based etch resists •Patterning hexamethyldithilathane on semiconductor surfaces

Dip-Pen"Nanolithography Richard D. Piner, Jin Zhu, Feng Xu, Seunghun Hong, and Chad A Mirkin, Science 1999 January 29, 283: 661-663 Multiple Ink Nanolithography: Toward a Multiple-Pen Nano Plotter Seunghun hong, Jin zhu, and Chad A. Mirkin: Science 1999 October15:286:523-525 A Nanoplotter with Both Parallel and serial writing Capabilities Seunghun Hong and Chad A. Mirkin: Science 2000 June 9; 288 1808-1811

"Dip-Pen" Nanolithography Richard D. Piner, Jin Zhu, Feng Xu, Seunghun Hong, and Chad A. Mirkin, Science 1999 January 29; 283: 661-663. Multiple Ink Nanolithography: Toward a Multiple-Pen Nano￾Plotter Seunghun Hong, Jin Zhu, and Chad A. Mirkin; Science 1999 October 15; 286: 523-525. A Nanoplotter with Both Parallel and Serial Writing Capabilities Seunghun Hong and Chad A. Mirkin;Science 2000 June 9; 288: 1808-1811

um c D 器 0 um

15 nm nm 60 nm 30 nm nm 1800 μm 43

④④⊕ ④ Silicon

+ + + + + + + + + + + + + + + + + + + + Silicon

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