《Microelectronics Process》lecture12

31551/6152 J Lecture12 MEMS Lab Testing Prof martin a schmidt Massachusetts Institute of Technology 10/20/2003

3.155J/6.152J Lecture 12: MEMS Lab Testing Prof. Martin A. Schmidt Massachusetts Institute of Technology 10/20/2003

Information on Quiz Wednesday oct. 22, in-class Closed book Covers lecture materials covered in problem sets through lithography Five questions, 20 pts. each a formula sheet will be provided a Sample quizzes from previous terms and the formula sheet are on the course web site Spring 2003 -Prepared by C. ross Fall 2002-Prepared by r o Handley Content somewhat different from this term Fall 2003-MA schmidt 315516.152]- Lecture12-side2

Information on Quiz „ Wednesday, Oct. 22, in-class „ Closed Book „ Covers lecture materials covered in problem sets through lithography „ Five questions, 20 pts. each „ A formula sheet will be provided „ Sample quizzes from previous terms and the formula sheet are on the course web site „ Spring 2003 – Prepared by C. Ross „ Fall 2002 – Prepared by R. O’Handley „ Content somewhat different from this term Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 2

Outline Review of the process and Testing Mechanics Cantilever Fixed-Fixed beam Second-order effects Residual stress Support compliance References Senturia, microsystems design Kluwer Fall 2003-MA schmidt 3. 155] 6.152]-Lecture 12-Slide 3

Outline „ Review of the Process and Testing „ Mechanics „ Cantilever „ Fixed-Fixed Beam „ Second-order effects „ Residual stress „ Support compliance „ References „ Senturia, Microsystems Design, Kluwer Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 3

The process- Lab 1 Grow 1. Oum of Si-Rich Silicon Nitride (siny LPCVD Process details to follow Characterize Uv1280) Thickness Refractive index Fall 2003-MA schmidt 3. 155].152]-Lecture 12-Slide 4

The Process – Lab 1 „ Grow 1.0 Pm of Si-Rich Silicon Nitride (SiN x) „ LPCVD Process (details to follow) „ Characterize (UV1280) „ Thickness „ Refractive index Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 4

The process- Lab 1 Pattern transfer Deposit photoresist Expose on contact aligner Plasma etch using SF6 Chemistr Strip resist Fall 2003-MA schmidt 315516.152]- Lecture12-side5

The Process – Lab 1 „ Pattern Transfer „ Deposit photoresist „ Expose on contact aligner „ Plasma etch using SF6 chemistry „ Strip resist Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 5

The process- Lab 2 KOH Undercut etch 20%,80C Fall 2003-MA schmidt 315516.152]- Lecture12-side6

The Process – Lab 2 „ KOH Undercut Etch „ 20%, 80C Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 6

The process- Lab 3 Break the wafer into die Mount the die on a metal plate Test using the Hysitron Nanoindenter Fall 2003-MA schmidt 3.155J 6. 152]-Lecture 12-Slide 7

The Process – Lab 3 „ Break the wafer into die „ Mount the die on a metal plate „ Test using the Hysitron Nanoindenter F w Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 7

Testing Cantilever Youngs Modulus Fixed-Fixed beams Young s modulus Residual stress Fall 2003-MA schmidt 315516.152]- Lecture12-side8

Testing „ Cantilever „ Young’s Modulus „ Fixed-Fixed Beams „ Young’s Modulus „ Residual Stress Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 8

The mask Beam length □口□口□ 写凹 501002005001000 Beam length Fall 2003-Ma schmidt 315516.152]- Lecture12-side9

The Mask Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 9

The mask- Cantilevers Beam Length 20 50 100 200 200 Fall 2003-Ma schmidt 315516.152- Lecture12-side10

The Mask - Cantilevers Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 10