《电力电子技术》课程实验指导（参考资料）MBR3060PT中文资料

元器件交易网www.cecb2b.com FAIRCHILD SEMICONDUCTOR MBR3035PT MBR3035PT-MBR3060PT Features 0203515 0.1340 Low power loss,high efficiency. 0.24623 0625(159 0078L.9 03238.2 ·High surge capacity. 0.22957 031301.4 MBR For use in low voltage,high frequency inverters,free wheeling,and polarity T0-3P/ .1743) 0.842L.3) T0-247AD 0220 13060 protection applications. 0134(3.9 Metal silicon junction,majority carrier 0.114(2. 21 0.130m conduction. a.07%(1.) .0.1082.7刀 High current capacity,low forward 0.1641) voltage drop. 0.1435 0.1273.22) 0.11订2.971 Guard ring for over voltage protection. PIN3 a.048(1.22) 003010 T6 30 Ampere Schottky Barrier Rectifiers ≤0.04(1.2 002005j 022557 0.205452 Dimensions are in:inches(mm) Absolute Maximum Ratings* T=25C unless otherwise noted Symbol Parameter Value Units lo Average Rectified Current 30 A if(repetitive) Peak Repetitive Forward Current (Rated VR,Square Wave,20 KHz)@T=130C 30 A ir(surge) Peak Forward Surge Current 8.3 ms single half-sine-wave 200 A Superimposed on rated load(JEDEC method) Po Total Device Dissipation 3.0 W Derate above 25C 25 mW/C RaJL Thermal Resistance,Junction to Lead 1.4 CM T Storage Temperature Range -65to+175 ℃ T Operating Junction Temperature -65t0+150 ℃ *These ratings are imiting vaues above which the of any device may be impaired. Electrical Characteristics T=25'C unless otherwise noted Parameter Device Units 3035PT 3045PT 3050PT 3060PT Peak Repetitive Reverse Voltage 35 45 50 60 V Maximum RMS Voltage 24 31 35 42 V DC Reverse Voltage (Rated VR) 35 45 50 60 Voltage Rate of Change(Rated VR) 10.000 V/uS Maximum Reverse Current rated VR TA=25C 1.0 5.0 mA TA=125C 60 100 mA Maximum Forward Voltage IF=20 A,Tc=25C 0.75 IF=20 A,Tc=125C 0.60 0.65 IF=30 A,Tc=25C 0.76 IF=30 A.Tc=125C 0.72 Peak Repetitive Reverse Surge 1.0 0.5 A Current 2.0 us Pulsu Width,f=1.0 KHz 1999 Fairchild Semiconductor Corporation MBR3035PT-MBR3060PT.Rev.A

MBR3035PT - MBR3060PT MBR3035PT - MBR3060PT, Rev. A MBR3035PT - MBR3060PT 30 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics TA = 25°C unless otherwise noted 1999 Fairchild Semiconductor Corporation Symbol Parameter Value Units IO Average Rectified Current 30 A if(repetitive) Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130°C 30 A if(surge) Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 200 A PD Total Device Dissipation Derate above 25°C 3.0 25 W mW/°C RθJL Thermal Resistance, Junction to Lead 1.4 °C/W Tstg Storage Temperature Range -65 to +175 °C TJ Operating Junction Temperature -65 to +150 °C Parameter Device Units 3035PT 3045PT 3050PT 3060PT Peak Repetitive Reverse Voltage 35 45 50 60 V Maximum RMS Voltage 24 31 35 42 V DC Reverse Voltage (Rated VR) 35 45 50 60 V Voltage Rate of Change (Rated VR) 10,000 V/uS Maximum Reverse Current @ rated VR TA = 25°C TA = 125°C 1.0 60 5.0 100 mA mA Maximum Forward Voltage IF = 20 A, TC = 25°C IF = 20 A, TC = 125°C IF = 30 A, TC = 25°C IF = 30 A, TC = 125°C - 0.60 0.76 0.72 0.75 0.65 - - V V V V Peak Repetitive Reverse Surge Current 2.0 us Pulsu Width, f = 1.0 KHz 1.0 0.5 A Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guard ring for over voltage protection. TO-3P/ TO-247AD Dimensions are in: inches (mm) + CASE PIN 2 PIN 3 PIN 1 0.193(4.90) 0.203(5.16) 10° 30° 0.078(1.98) 0.108(2.7) 0.118(3.0) 0.020(0.51) 0.030(0.76) 10° TYP BOTH SIDES 1 2 3 0.625(15.9) 0.645(16.4) .17(4.3) 0.076(1.93) 0.086(2.18) 0.044(1.12) 0.048(1.22) 0.205(5.2) 0.225(5.7) 0.225(5.7) 0.245(6.2) 0.114(2.9) 0.134(3.4) 0.313(7.9) 0.323(8.2) 0.117(2.97) 0.127(3.22) 0.14(3.5) 0.16(4.1) 0.775(19.7) 0.795(20.2) 0.82(20.8) 0.84(21.3) 元器件交易网www.cecb2b.com

元器件交易网www.cecb2b.com Schotty Barrier Rectifier MB (continued) Typical Characteristics R3035PT Forward Current Derating Curve Non-Repetitive Surge Current 30 三300 三24 MBR3035PT-MBR3045PT MBR3050PT-MBR3060PT 200 18 MBR3060PT SINGLE PHASE 150 HALF WAVE 12 60HZ RESISTIVE OR 100 INDUCTIVE LOAD 6 375(9.00mm)L0AD 50 LENGTHS 0 36 50 75 100 125 150 175 2 5 10 20 50 100 AMBIENT TEMPERATURE(C) NUMBER OF CYCLES AT 60Hz Forward Characteristics Reverse Characteristics 50 50 150d MBR3035PT-MBR3045PT 10 10 ETA=125C MBR3050PT-MBR3060PT- MBR3050PT-MBR3060PT TA=75C- 0.1 0.1 MBR3035PT-MBR3045PT 0.01 -Pulse Width=300uS 2%Duty Cycle MBR3050PT-MBR3060PT 0.01 0.001 0.2 0.4 0.60.8 12 0 20 4060.80100120140 FORWARD VOLTAGE(V) PERCENT OF RATED PEAK REVERSE VOLTAGE(%) Typical Junction Capacitance Transient Thermal Impedance 5000 2000 MBR3 10 1000 MBR3050PT-MBR3060PT 500 200 100 0.1 0 100 07 10 100 REVERSE VOLTAGE(V) T.PULSE DURATION(sec.) MBR3035PT-MBR3060PT.Rev.A

MBR3035PT - MBR3060PT MBR3035PT - MBR3060PT, Rev. A Schotty Barrier Rectifier (continued) Typical Characteristics Forward Current Derating Curve 0 25 50 75 100 125 150 175 0 6 12 18 24 30 AMBIENT TEMPERATURE ( C) FORWARD CURRENT (A) SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS º MBR3035PT-MBR3045PT MBR3050PT-MBR3060PT Transient Thermal Impedance 0.01 0.1 1 10 100 0.1 1 10 100 T. PULSE DURATION (sec.) TRANSIENT THERMAL IMPEDANCE ( C/W) º Non-Repetitive Surge Current 1 2 5 10 20 50 100 0 50 100 150 200 250 300 NUMBER OF CYCLES AT 60Hz PEAK FORWARD SURGE CURRENT (A) Typical Junction Capacitance 0.1 1 10 100 100 200 500 1000 2000 5000 REVERSE VOLTAGE (V) JUNCTION CAPACITANCE (pF) MBR3035PT-MBR3045PT MBR3050PT-MBR3060PT Forward Characteristics 0 0.2 0.4 0.6 0.8 1 1.2 0.01 0.1 1 10 50 FORWARD VOLTAGE (V) FORWARD CURRENT (A) Pulse Width = 300µS 2% Duty Cycle T = 25 C º A T = 150 C º A MBR3035PT-MBR3045PT MBR3050PT-MBR3060PT Reverse Characteristics 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 50 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) REVERSE CURRENT (mA) T = 25 C º A T = 75 C º A T = 125 C º A MBR3035PT-MBR3045PT MBR3050PT-MBR3060PT MBR3050PT-MBR3060PT MBR3035PT-MBR3045PT 元器件交易网www.cecb2b.com

元器件交易网www.cecb2b.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEXTM ISOPLANARTM COolFETTM MICROWIRETM CROSSVOLTTM POPTM E2CMOSTM PowerTrenchTM FACTTM QSTM FACT Quiet Series TM Quiet Series TM FASTR SuperSOTTM-3 FASTrTM SuperSOTTM-6 GTOTM SuperSOTTM-8 HiSeCTM TinyLogic TM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY,FUNCTION OR DESIGN.FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS.NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1.Life support devices or systems are devices or 2.A critical component is any component of a life systems which,(a)are intended for surgical implant into support device or system whose failure to perform can the body,or (b)support or sustain life,or (c)whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system,or to affect its safety or with instructions for use provided in the labeling.can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development.Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data,and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No ldentification Needed Full Production This datasheet contains final specifications.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only

TRADEMARKS ACEx™ CoolFET™ CROSSVOLT™ E2 CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 元器件交易网www.cecb2b.com