《电力电子技术》课程实验指导（参考资料）scr

米*YHeX MP02XXX190 Series SEMICONDUCTOR Phase Control Dual SCR,SCR/Diode Modules Replaces January 2000 version,DS4479-4.0 DS4479-5.0July2002 FEATURES KEY PARAMETERS ■Dual Device Module VOR 1200V Electrically Isolated Package e 5500A Pressure Contact Construction 190A International Standard Footprint AVper amm) Vinol 3000V Alumina(non-toxic)Isolation Medium Code Circuit APPLICATIONS HBT ■Motor Control 片内 Controlled Rectifier Bridges HBP 十 ■Heater Control ■AC Phase Control HBN 大十- Fig.1 Circuit diagrams VOLTAGE RATINGS Type Repetitive Conditions Number Peak Voltages VDRM VRRM MP02XXX190-12 1200 T,=125℃ MP02XXX190-10 1000 loRM=RM=30mA MP02XXX190-08 1000 Vos VRsu= VoRu&V+100V respectively Lower voltage grades available ORDERING INFORMATION Module type code:MP02. For further information see Package Details Order As: MP02HBT190-12 or MP02HBT190-10 or MP02HBT190-08 Fig.2 Electrical connections-(not to scale) MP02HBP190-12 or MP02HBP190-10 or MP02HBP190-08 MP02HBN190-12 or MP02HBN190-10 or MP02HBN190-08 Note:When ordering.please use the complete part number. 1/8 www.dynexsemi.com

1/8 www.dynexsemi.com MP02XXX190 Series MP02XXX190 Series Phase Control Dual SCR, SCR/Diode Modules Replaces January 2000 version, DS4479-4.0 DS4479-5.0 July 2002 FEATURES ■ Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction ■ International Standard Footprint ■ Alumina (non-toxic) Isolation Medium APPLICATIONS ■ Motor Control ■ Controlled Rectifier Bridges ■ Heater Control ■ AC Phase Control VOLTAGE RATINGS ORDERING INFORMATION Order As: MP02HBT190-12 or MP02HBT190-10 or MP02HBT190-08 MP02HBP190-12 or MP02HBP190-10 or MP02HBP190-08 MP02HBN190-12 or MP02HBN190-10 or MP02HBN190-08 Note: When ordering, please use the complete part number. KEY PARAMETERS VDRM 1200V I TSM 5500A I T(AV)(per arm) 190A Visol 3000V Code Circuit HBT HBP HBN Fig.1 Circuit diagrams 1 23 Fig. 2 Electrical connections - (not to scale) Module type code: MP02. For further information see Package Details. Lower voltage grades available. Repetitive Peak Voltages VDRM VRRM Type Number 1200 1000 1000 MP02XXX190-12 MP02XXX190-10 MP02XXX190-08 Tvj = 125o C I DRM = IRRM = 30mA VDSM & VRSM = VDRM & VRRM + 100V respectively Conditions

MP02XXX190 Series BYNex SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS-PER ARM Stresses above those listed under'Absolute Maximum Ratings'may cause permanent damage to the device.In extreme conditions,as with all semiconductors,this may include potentially hazardous rupture of the package.Appropriate safety precautions should always be followed.Exposure to Absolute Maximum Ratings may affect device reliability. Symbol Parameter Test Conditions Max. Units lTuv) Mean on-state current Half wave resistive load Tease=75'C 190 A Tae=85℃ 160 9 TRMS RMS value Tease=75'C 300 A ITsM Surge(non-repetitive)on-current 10ms half sine,T=125'C 6.8 kA E I2t for fusing V。=0 231×109 A2s 1sM Surge(non-repetitive)on-current 10ms half sine,T=125'C 5.5 kA A I2t for fusing V=50%VDRM 150x10的 A2s Vd Isolation voltage Commoned terminals to base plate. 3000 V AC RMS,1 min,50Hz THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Rae Thermal resistance-junction to case dc 0.21 C/kW (per thyristor or diode) Half wave - 0.22 C/kW 3 Phase 0.23 C/kW Rie间 Thermal resistance-case to heatsink Mounting torque =6Nm 0.07 C/kW (per thyristor or diode) with mounting compound Ty Virtual junction temperature Reverse (blocking) 125 T的 Storage temperature range 40 125 ℃ Screw torque Mounting-M6 6(55) Nm (b.ins) Electrical connections-M6 5(44) Nm (lb.ins) Weight(nominal) 350 218 www.dynexsemi.com

2/8 www.dynexsemi.com MP02XXX190 Series ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Test Conditions Half wave resistive load Tcase = 75˚C Tcase = 85˚C Tcase = 75˚C 10ms half sine, Tj = 125˚C VR = 0 10ms half sine, Tj = 125˚C VR = 50% VDRM Commoned terminals to base plate. AC RMS, 1 min, 50Hz Symbol I T(AV) I T(RMS I TSM I 2 t I TSM I 2 t Visol Units A A A kA A2 s kA A2 s V Max. 190 160 300 6.8 231 x 103 5.5 150 x 103 3000 Parameter Mean on-state current RMS value Surge (non-repetitive) on-current I 2 t for fusing Surge (non-repetitive) on-current I 2 t for fusing Isolation voltage Test Conditions dc Half wave 3 Phase Mounting torque = 6Nm with mounting compound Reverse (blocking) - Mounting - M6 Electrical connections - M6 - Parameter Thermal resistance - junction to case (per thyristor or diode) Thermal resistance - case to heatsink (per thyristor or diode) Virtual junction temperature Storage temperature range Screw torque Weight (nominal) THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-hs) Tvj Tstg - - Units ˚C/kW ˚C/kW ˚C/kW ˚C/kW ˚C ˚C Nm (lb.ins) Nm (lb.ins) g Max. 0.21 0.22 0.23 0.07 125 125 6 (55) 5 (44) 350 Min. - - - - - –40 - - -

BYNeX MP02XXX190 Series SEMICONDUCTOR DYNAMIC CHARACTERISTICS-THYRISTOR Symbol Parameter Test Conditions Min. Max. Units RRDRM Peak reverse and off-state current At VRRVoRM T=125'C 30 mA dV/dt Linear rate of rise of off-state voltage T067%VmwT=125*C 1000 V/us dl/dt Rate of rise of on-state current From 67%VoRM to 400A, Repetitive 50Hz 500 A/us Gate source 20V,202, t=0.5us,T=125C V.co Threshold voltage At T=125'C.See note 1 、 0.88 V On-state slope resistance At Ty=125'C.See note 1 0.7 m2 Note 1:The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only.Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units Nat Gate trigger voltage VoM=5V,Tce=25℃ 3.0 V lat Gate trigger current VoRM=5V,Tease =25C 150 mA Va Gate non-trigger voltage At VoRM T=125C 0.25 V Vrau Peak forward gate voltage Anode positive with respect to cathode 30 VEGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table fig.5 100 W Pouv Mean gate power 5 W 3/8 www.dynexsemi.com

3/8 www.dynexsemi.com MP02XXX190 Series Units mA V/µs A/µs V mΩ Test Conditions At VRRM/VDRM, Tj = 125˚C To 67% VDRM, Tj = 125˚C From 67% VDRM to 400A, Repetitive 50Hz Gate source 20V, 20Ω, t r = 0.5µs, Tj = 125˚C At Tvj = 125˚C. See note 1 At Tvj = 125˚C. See note 1 Parameter Peak reverse and off-state current Linear rate of rise of off-state voltage Rate of rise of on-state current Threshold voltage On-state slope resistance DYNAMIC CHARACTERISTICS - THYRISTOR Symbol I RRM/IDRM dV/dt dI/dt VT(TO) rT Max. 30 1000 500 0.88 0.7 Min. - - - - - Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25o C VDRM = 5V, Tcase = 25o C At VDRM, Tcase = 125o C Anode positive with respect to cathode Anode negative with respect to cathode - Anode positive with respect to cathode See table fig. 5 - Symbol VGT I GT VGD VFGM VFGN VRGM I FGM PGM PG(AV) GATE TRIGGER CHARACTERISTICS AND RATINGS Max. 3.0 150 0.25 30 0.25 5 10 100 5 Units V mA V V V V A W W

MP02XXX190 Series BYNeX SEMICONDUCTOR 20 11m 2000 Measured under pulse conditions 2t=12xt T=125C 2 31500 150 100 24 100 500 12t value -(A2s x 103) 50 10 12345 10 203050 .0 1.5 2.0 2.5 Instantaneous on-state voltage,V-(V) ms Cycles at 50Hz Duration Fig.3 Maximum(limit)on-state characteristics Fig.4 Surge(non-repetitive)on-state current vs time (Thyristor or diode with 50%VRRM at Ta=125C) 100 0.3 Rth(j-hs) 10 0.2 pper limit95 0.1 Reaion of certain triggering 5明 01 oH 0.001 0.01 0.1 10 0.001 0.010 0.100 1.0 10 100 Gate trigger current,IGT-(A) IFGM Time-(s) Fig.5 Gate characteristics Fig.6 Transient thermal impedance-dc 4/8 www.dynexsemi.com

4/8 www.dynexsemi.com MP02XXX190 Series 1.0 1.5 2.0 2.5 Instantaneous on-state voltage, VT - (V) 0 500 1000 1500 2000 Instantaneous on-state current, IT - (A) Measured under pulse conditions Tj = 125˚C Fig. 6 Transient thermal impedance - dc Fig. 3 Maximum (limit) on-state characteristics Fig. 4 Surge (non-repetitive) on-state current vs time (Thyristor or diode with 50% VRRM at Tcase = 125˚C) Fig. 5 Gate characteristics 0.001 0.010 0.100 1.0 10 100 Time - (s) 0 0.1 0.2 0.3 Thermal impedance - (˚C/W) Rth(j-hs) Rth(j-c) 0.001 0.01 0.1 1 10 Gate trigger current, IGT - (A) 100 10 1 0.1 Gate trigger voltage, VGT - (V) 100W 50W 10W 20W 5W Region of certain triggering Upper limit 95% Lower limit 5% Tj = 125˚C Tj = 25˚C Tj = -40˚C VGD IFGM 20 15 10 5 0 Peak half sine wave on-state current - (kA) 1 10 1 2 3 45 50 ms Cycles at 50Hz Duration 50 100 I2t value - (A2s x 103) I2t I 2t = Î2 x t 2 150 10 20 30

BYNeX MP02XXX190 Series SEMICONDUCTOR 300 400 d.c. 1807 350 250 120° 90° 300 180 8200 60° 120 250 90 3160 30 60 30 150 100 100 50 0 50 100150 200 250 50 100150200 250 300 Mean on-state current,I(AV)-(A) Mean on-state current,I(AV)-(A) Fig.7 On-state power loss per arm vs on-state current at Fig.8 On-state power loss per arm vs on-state current at specified conduction angles,sine wave 50/60Hz specified conduction angles,square wave 50/60Hz 140 140 120 120 100 100 80 80 60 d.c. 40 40 20 20 30 60°90°120 180° 306090120180 0 50 100 150 200 250 0 50 100 150 200 250 300 Mean on-state current,I(AV)-(A) Mean on-state current,I(Av)-(A) Fig.9 Maximum permissible case temperature vs on-state Fig.10 Maximum permissible case temperature vs on-state current at specified conduction angles,sine wave 50/60Hz current at specified conduction angles,square wave 50/60Hz 5/8 www.dynexsemi.com

5/8 www.dynexsemi.com MP02XXX190 Series Fig. 7 On-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60Hz Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60Hz Fig. 9 Maximum permissible case temperature vs on-state current at specified conduction angles, sine wave 50/60Hz Fig. 10 Maximum permissible case temperature vs on-state current at specified conduction angles, square wave 50/60Hz 0 50 100 150 200 250 Mean on-state current, IT(AV) - (A) 300 250 200 150 100 50 0 On-state power loss per device - (W) 180˚ 120˚ 90˚ 60˚ 30˚ 0 50 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 400 350 300 250 200 150 100 50 0 On-state power loss per device - (W) 180˚ 120˚ 90˚ 60˚ 30˚ d.c. 0 50 100 150 200 250 Mean on-state current, IT(AV) - (A) 120 100 80 60 40 20 0 Maximum permissible case temperature - (˚C) 30˚ 60˚ 90˚ 120˚ 180˚ 140 0 50 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 120 100 80 60 40 20 0 Maximum permissible case temperature - (˚C) 30˚ 60˚ 90˚ 120˚ 180˚ 140 d.c

MP02XXX190 Series BYNeX SEMICONDUCTOR 1200 0.02 Rth(s-)C/W 0.04 1000 R-Load 800 0.08 L-Load 600 0.10 0.12 0.15 400 0.20 0.30 200 0.40 0 20 40 6080 100120 0 100 200 300 400 Maximum ambient temperature-('C) D.C.output current-(A) Fig.11 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance (Note:Rvalues given above are true heatsink thermal resistances to ambient and already account for Rmodule contact thermal) 1200 04 0.02 Rtn(hs-a)'C/W R&L-Load 1000 800 0.08 3 0.10 .1o/al 600 0.12 0.15 400 0.20 0.30 200 0.40 0 20 40 60 80 100 120 0 100 200 300 400 Maximum ambient temperature-('C) D.C.output current-(A) Fig.12 50/60Hz 3-phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance (Note:Rvalues given above are true heatsink thermal resistances to ambient and already account for Rmodule contact thermal) 6/8 www.dynexsemi.com

6/8 www.dynexsemi.com MP02XXX190 Series Fig. 11 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance (Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal) Fig. 12 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance (Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal) 0 40 80 120 0 200 100 300 400 1200 1000 800 600 400 200 0 Total power - (W) 20 60 100 Maximum ambient temperature - (˚C) D.C. output current - (A) Rth(hs-a) 0.02 ˚C/W 0.04 0.08 0.10 0.12 0.15 0.20 0.40 0.30 R - Load L - Load 0 40 80 120 0 100 200 300 400 1200 1000 800 600 400 200 0 Total power - (W) 20 60 100 Maximum ambient temperature - (˚C) D.C. output current - (A) R & L- Load Rth(hs-a) 0.04 0.02 ˚C/W 0.08 0.10 0.12 0.15 0.20 0.30 0.40

BYNeX MP02XXX190 Series SEMICONDUCTOR PACKAGE DETAILS For further package information,please contact Customer Services.All dimensions in mm,unless stated otherwise. DO NOT SCALE. 23 23 24 15 5 2 holes 06.5 K2G2 2 13 Circuit type:HBN 13 ●◆ 80 G ●3 3x M6 Circuit type:HBP 人◆3 Circuit type:HBT 94 Nominal weight:350g Recommended fixings for mounting:M6 socket head cap screws Recommended mounting torque:6Nm(55lb.ins) Recommended torque for electrical connections:5Nm(44lb.ins) Maximum torque for electrical connections:8Nm(70lb.ins) Module outline type code:MP02 MOUNTING RECOMMENDATIONS Adequate heatsinking is required to maintain the base An even coating of thermal compound (eg.Unial)should be temperature at 75'C if full rated current is to be achieved.Power applied to both the heatsink and module mounting surfaces. dissipation may be calculated by use ofndinfomation This should ideally be 0.05mm(0.002")per surface to ensure in accordance with standard formulae.We can provide optimum thermal performance. assistance with calculations or choice of heatsink if required. After application of thermal compound,place the module The heatsink surface must be smooth and flat:a surface finish squarely over the mounting holes,(or 'T'slots)in the heatsink. of N6(32uin)and a flatness within 0.05mm(0.002")are Fit and finger tighten the recommended fixing bolts at each end. recommended. Using a torque wrench,continue to tighten the fixing bolts by Immediately prior to mounting,the heatsink surface should be rotating each bolt in turn no more than 1/4 of a revolution at a lightly scrubbed with fine emery,Scotch Brite or a mild chemical time,until the required torque of 6Nm(55Ibs.ins)is reached on etchant and then cleaned with a solvent to remove oxide build all bolts at both ends. up and foreign material.Care should be taken to ensure no It is not acceptable to fully tighten one fixing bolt before starting foreign particles remain. to tighten the others.Such action may DAMAGE the module. 718 www.dynexsemi.com

7/8 www.dynexsemi.com MP02XXX190 Series PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 23 23 24 13 80 34 30 94 3x M6 12.8 2 holes Ø6.5 1 2 3 24 5 15 K2 G2 K1 G1 Nominal weight: 350g Recommended fixings for mounting: M6 socket head cap screws Recommended mounting torque: 6Nm (55lb.ins) Recommended torque for electrical connections: 5Nm (44lb.ins) Maximum torque for electrical connections: 8Nm (70lb.ins) Module outline type code: MP02 1 2 3 K2 G2 G1 K1 1 2 3 Circuit type: HBN Circuit type: HBT Circuit type: HBP G1 K1 1 2 3 K2 G2 MOUNTING RECOMMENDATIONS Adequate heatsinking is required to maintain the base temperature at 75˚ C if full rated current is to be achieved. Power dissipation may be calculated by use of VT(TO) and rT information in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required. The heatsink surface must be smooth and flat; a surface finish of N6 (32µin) and a flatness within 0.05mm (0.002") are recommended. Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain. An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. After application of thermal compound, place the module squarely over the mounting holes, (or ‘T’ slots) in the heatsink. Fit and finger tighten the recommended fixing bolts at each end. Using a torque wrench, continue to tighten the fixing bolts by rotating each bolt in turn no more than 1/4 of a revolution at a time, until the required torque of 6Nm (55lbs.ins) is reached on all bolts at both ends. It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module

BYNex SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors.Data with respect to air natural,forced air and liquid cooling(with flow rates)is available on request. For further information on device clamps,heatsinks and assemblies,please contact your nearest sales representative or Customer Services. BYNeX http://www.dynexsemi.com SEMICONDUCTOR e-mail:power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Tel:+44(0)1522502753/502901.Fax:+44(0)1522500020 Doddington Road,Lincoln. Lincolnshire.LN6 3LF.United Kingdom. SALES OFFICES Tel:+44-(0)1522-500500 Benelux,Italy Switzerland:Tel:+33 (0)1 64 66 42 17.Fax:+33 (0)1 64 66 42 19. Fax:+44-(0)1522-500550 France:Tel:+33(0)247557552.Fax:+33(0)247557559. Germany,Northern Europe,Spain Rest Of World:Tel:+44(0)1522 502753/502901. Fax:+44(0)1522500020 North America:Tel:(440)259-2060.Fax:(440)259-2059.Te:(949)733-3005.Fax:(949)733-2986 These offices are supported by Representatives and Distributors in many countries world-wide. Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION-NOT FOR RESALE.PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard comer of the front page,to indicate product status.The annotations are as follows:- Target Information:This is the most tentative fomm of information and represents a very preliminary specification.No actual design work on the product has been started. Preliminary Information:The product is in design and development.The datasheet represents the product as it is understood but details may change Advance Information:The product design is complete and final characterisation for volume production is well in hand. No Annotation:The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide intormation only which (unless agreed by the Company in writing)may not be used,applied or reproduced for any purpose nor torm part of any order or contract nor to be regarded as a representation relating to the products or services concemed.No warranty or guarantee express or impled is made regarding the.perormance or of any product or service.The Company reserves the right to alterwithout prior notice the specification,design or price ot any product or service.Intor nation conceming possible methodsofuse is provided as a guide only and does notconsttute any guarantee that such methods of use will be satisfactory in a specific plece of equipment.It is the user's responsibility to fully determine the perfommance and suitability of any equlpment using such information and to ensure that any publication or data used is up to date and has not been superseded.These products are not sultable for use in any medical products whose failure to perfom may result in signiticant injury or death to the user.All products and matenals are sold and services provided subject to the Company's conditions of sale,which are available on request. All brand names and product name www.dynexsemi.com

www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification