西安交通大学：《电力电子变电技术》fast rcovery diode

RF101L2S Diodes Fast recovery Diode RF101L2S ● Applications .External dimensions(Unit: mm) High frequency rectification 1)Small power mold type(PMDS) 2) Ultra low VF 3)Very fast recovery 12 4)Low switching loss ● Construction Silicon epitaxial planar ● Absolute maximum ratings(a=25°C) symbol roltage(repetitive pea c Reverse voltage(Dc) 200 Average rectified forward current Forward peak surge current(60Hz. 1cyc )IFSM Mounting on glass epoxi board ● Electrical characteristics(Ta=25°C) Symbol Max Forward volta 0.815 0.870 F=1.0A Reverse current 10u VR=200V Reverse recovery time rr=025×|R 1/2 Rond

RF101L2S Diodes 1/2 Fast recovery Diode RF101L2S zApplications High frequency rectification zFeatures 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss zConstruction Silicon epitaxial planar zExternal dimensions (Unit : mm) 0.1 CATHODE MARK 4.5±0.2 2.6±0.2 2.0±0.2 1.2±0.3 1.5±0.2 5.0±0.3 +0.02 −0.1 EX. RF101L2S → 6 , 6 EX. 2003,09 → 3 , 9 1 2 3 4 ∗ 1 , ···Type No. 2 3 4, ···Manufacturing date zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) VRM 200 V Reverse voltage (DC) VR 200 V Average rectified forward current ∗ IO 1.0 A IFSM 20 A Junction temperature 150 °C Storage temperature −55 to +150 °C ∗ Mounting on glass epoxi board Tj Tstg Forward peak surge current (60Hz 1cyc.) zElectrical characteristics (Ta=25°C) Parameter Symbol Max. Unit Conditions Forward voltage VF 0.870 V IF=1.0A Reverse current IR 10µ A VR=200V Reverse recovery time IF=0.5A trr IR=1.0A Typ. 0.815 10n 12 25 nS Note) ESD sensitive product handing required. Irr=0.25 + IR

RF101L2S Diodes ● Electrical characteristic curves(a=25°C) FORWARD VOLTAGE: VF(V) REVERSE VOLTAGE: VR (V) AMBIENT TEMPERATURE: Ta ('c) Fig 1 Forward temperature Fig 3 Derating curve 服開 乌5零品出 802040608101214161820 AVERAGE RECTIFED FORWARD CURRENT: Io (A) CYCLE Fig 4 Power dissipation Fig5 Forward peak surge current Fig. 6 Capacitance between terminals ECOVERY TIMES: trr(ns) 2/2 Rond

RF101L2S Diodes 2/2 zElectrical characteristic curves (Ta=25°C) Fig.1 Forward temperature characteristics 0 0.2 0.4 0.6 0.8 1 1000 100 10 1 125°C FORWARD CURRENT : IF (mA) FORWARD VOLTAGE : VF (V) 75°C 25°C −25°C Fig.2 Reverse temperature characteristics 0 10000 1000 100 10 1 0.1 50 100 150 200 REVERSE VOLTAGE : VR (V) REVERSE CURRENT : IR (nA) 125°C 75°C 25°C −25°C 0 0 2.0 0.8 1.0 1.2 1.4 1.6 1.8 0.6 0.4 0.2 25 75 125 50 100 150 AVERAGE RECTIFIED CURRENT : IO (A) AMBIENT TEMPERATURE : Ta (°C) Fig.3 Derating curve DC D=1/2 Sin(θ=180) T t IO 0A 0V VR D=t / T VR=200V Tj=150°C 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD POWER DISSIPATION : PF (W) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) Fig. 4 Power dissipation characteristics DC D=1/2 Sin(θ=180) 0 20 25 15 10 5 1 10 100 CYCLE SURGE FORWARD CURRENT : IFSM (A) Fig.5 Forward peak surge current 8.3ms 8.3ms 1cycle sin wave IFSM 0 5 10 15 20 25 30 100 10 0 CAPACITANCE BETWEEN TERMINALS : CT (pF) REVERSE VOLTAGE : VR (V) Fig. 6 Capacitance between terminals characteristics 0 0 6 8 10 12 14 16 18 20 0.25 0.5 0.75 1 1.5 1.25 FORWARD CURRENT : IF(A) RECOVERY TIMES: trr (ns) Fig. 7 Reverse recovery time IR=1.0A Irr=0.25 IR +