西安交通大学：《电力电子变电技术》Phase Control Thyristor

DSM 1800V TAVM 730A Phase Control Thyristor 1150A TSM 9000A 5STP07D1800 v 0.8V 0.54mg Doc. No. 5SYA1027-05 Jan 02 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking Maximum rated values 1) Conditions 5sTP07D18005sTP07D16005sTP07D1200 VDRM, VRRM f=50 Hz, tp=10ms 1800V 1600V 1200V tp= 5ms, single pulse 2000V 1800V 1400V dVidtcrit Exp to 0.67 X VDRM, T=125C 1000v/us Characteristic values I Symbol Conditions in typ VoRM,可=125°C mA Reverse leakage curren VRMT=125°C Mechanical data Maximum rated values 1) Parameter SYmbol Conditions min typmax Unit Mounting force 8 10 12 Acceleration Device unclamped 50 Device clamped m/s Characteristic values Parameter Symbol Conditions minty max Unit 0.3 k Surface creepage distance Air strike distance Maximum Ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice ABR

1) Maximum Ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VDSM = 1800 V ITAVM = 730 A ITRMS = 1150 A ITSM = 9000 A VT0 = 0.8 V rT = 0.54 mΩ Phase Control Thyristor 5STP 07D1800 Doc. No. 5SYA1027-05 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications • Optimum power handling capability Blocking Maximum rated values 1) Symbol Conditions 5STP 07D1800 5STP 07D1600 5STP 07D1200 VDRM, VRRM f = 50 Hz, tp = 10ms 1800 V 1600 V 1200 V VRSM1 tp = 5ms, single pulse 2000 V 1800 V 1400 V dV/dtcrit Exp. to 0.67 x VDRM, Tj = 125°C 1000 V/µs Characteristic values Parameter Symbol Conditions min typ max Unit Forwarde leakage current IDRM VDRM, Tj = 125°C 100 mA Reverse leakage current IRRM VRRM, Tj = 125°C 100 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Mounting force FM 8 10 12 kN Acceleration a Device unclamped 50 m/s2 Acceleration a Device clamped 100 m/s2 Characteristic values Parameter Symbol Conditions min typ max Unit Weight m 0.3 kg Surface creepage distance DS 25 mm Air strike distance Da 14 mm

5sTP07D1800 On-state Maximum rated values Parameter Symbol Conditions in typ max Unit Max average on-state Half sine wave, T=70C 730 A current RMS on-state current A Max peak non-repetitive ITSM tp=10 ms, Tj=125.C, surge current VO=VR=OV Max peak non-repetitive ITSM tp=8.3 ms, Tj=125C. 9500 A surge current VD=VR=O V iting load integral t 374 KAS Characteristic values SymbolConditions max On-state voltage lr=1500A,T=125°C Threshold voltage Vo|=500A-1500AT=125°c Slope resistance TT 「T=125°℃ 0.54 Holding current T=25°C 70 °C 50m4 atching current 500 A T;=125°C 200mA Switching Maximum rated values 1 ymbol Conditions max Unit Critical rate of rise of on- di/dterit Cont 150Aμs state curren T=125C, ITRM=1500 A, f=50 Hz Critical rate of rise of on- di/dtarit FG=2A,t,=0.5 us 1000As state curren f= 1H Circuit-commutated turn-off t T=125°C,RaM=1500A 400 VR=200V, dir/dt=-20 A/Hs Vos0.67 VDRM, dvp/dt= 20 V/us Characteristic values Parameter Symbol Conditions min typ max Unit Recovery charge Q T1=125°C,HRM=1500A 00 1500 VR=200V, din/dt =-20 A/Hs Delay time Vo =0.4.VDRM, IFG=2 A, t=0.5 us 3 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1027-05 Jan 02 page 2 of 6

5STP 07D1800 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1027-05 Jan. 02 page 2 of 6 On-state Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Max. average on-state current ITAVM Half sine wave, Tc = 70°C 730 A RMS on-state current ITRMS 1150 A Max. peak non-repetitive surge current ITSM 9000 A Limiting load integral I2 t tp = 10 ms, Tj = 125°C, VD=VR = 0 V 405 kA2 s Max. peak non-repetitive surge current ITSM 9500 A Limiting load integral I2 t tp = 8.3 ms, Tj = 125°C, VD=VR=0 V 374 kA2 s Characteristic values Parameter Symbol Conditions min typ max Unit On-state voltage VT IT = 1500 A, Tj = 125°C 1.6 V Threshold voltage VT0 IT = 500 A - 1500 A, Tj= 125°C 0.8 V Slope resistance rT Tj = 125°C 0.54 mΩ Holding current IH Tj = 25°C 70 mA Tj = 125°C 50 mA Latching current IL Tj = 25°C 500 mA Tj = 125°C 200 mA Switching Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Critical rate of rise of on￾state current di/dtcrit Cont. f = 50 Hz 150 A/µs Critical rate of rise of on￾state current di/dtcrit Tj = 125°C, ITRM = 1500 A, VD ≤ 0.67⋅VDRM, IFG = 2 A, tr = 0.5 µs Cont. f = 1Hz 1000 A/µs Circuit-commutated turn-off time tq Tj = 125°C, ITRM = 1500 A, VR = 200 V, diT/dt = -20 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs, 400 µs Characteristic values Parameter Symbol Conditions min typ max Unit Recovery charge Qrr Tj = 125°C, ITRM = 1500 A, VR = 200 V, diT/dt = -20 A/µs 800 1500 µAs Delay time td VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs 3 µs

5STP07D1800 Triggering Maximum rated values 1) mbol Conditions max Peak forward gate voltage VEC Peak forward gate current FGM Peak reverse gate voltage VRGM Gate power loss For dc gate current 3 Average gate power loss PGAv see Fig. 9 Characteristic values Symbol Conditions min typ Unit Gate trigger voltage GT T=25C 2.6 Gate trigger current T=25C 400mA trigger voltage VGD VD=0.4X VDRM,Tyimax=125C Gate non-trigger current Vo =0. VODM. T umax=125°C 10 Thermal Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Operating junction temperature range Storage temperature range T stg 140 Characteristic values Parameter Symbol Conditions min typ max Unit Thermal resistance junction Rtng-c)Double side cooled K/kW to case Anode side cooled Rti-crc Cathode side cooled 74K/kW Thermal resistance case to Run(c-h) Double side cooled 7.5K/kW heatsink Rn(eh) Single side cooled 15 K/kW Analytical function for transient thermal nJc [K/kw impedance [=63 Zc()=∑R(1-e") R(KKW)19.18982 1.44 t(s)03862005610005800024 Fig. 1 Transient thermal impedance junction-to case ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1027-05 Jan 02 page 3 of 6

5STP 07D1800 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1027-05 Jan. 02 page 3 of 6 Triggering Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Peak forward gate voltage VFGM 12 V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Gate power loss PG For DC gate current 3 W Average gate power loss PGAV see Fig. 9 Characteristic values Parameter Symbol Conditions min typ max Unit Gate trigger voltage VGT Tj = 25°C 2.6 V Gate trigger current IGT Tj = 25°C 400 mA Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 125°C 0.3 V Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 125°C 10 mA Thermal Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Operating junction temperature range Tj 125 °C Storage temperature range Tstg -40 140 °C Characteristic values Parameter Symbol Conditions min typ max Unit Thermal resistance junction to case Rth(j-c) Double side cooled 36 K/kW Rth(j-c)A Anode side cooled 70 K/kW Rth(j-c)C Cathode side cooled 74 K/kW Thermal resistance case to heatsink Rth(c-h) Double side cooled 7.5 K/kW Rth(c-h) Single side cooled 15 K/kW Analytical function for transient thermal impedance: Z (t) = R(1- e ) n i 1 -t/ thJC i i
= τ i 1 2 34 Ri(K/kW) 19.18 9.82 5.45 1.44 τi(s) 0.3862 0.0561 0.0058 0.0024 Fig. 1 Transient thermal impedance junction-to case

5sTP07D1800 I(Al IT(kAI 50o 0.60.70.80.9 01.11,21.31.41.51.6 V(v Fig. 2 On-state characteristics. Fig 3 On-state characteristics T=125C, 10ms half sine Pr (W) T °c) Double-sided cooling 125 2000 0° 180° rectangular 80°sine 1600 120° rectangu 110 105 1000 85 =125°c 20040060080010001200 TAV (A) Fig 4 On-state power dissipation Vs. mean on Fig 5 Max permissible case temperature vs state current. Turn-on losses excluded mean on-state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1027-05 Jan 02 4 of 6

5STP 07D1800 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1027-05 Jan. 02 page 4 of 6 Fig. 2 On-state characteristics. Fig. 3 On-state characteristics. Tj =125°C, 10ms half sine Fig. 4 On-state power dissipation vs. mean on￾state current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current

5sTP07D1800 M(kA) It(MA s ITEM(KA) ■■■■ 1.Vn=0 3.V=0 1.8 2. VR=0.6xVRRM 4 Va= 0.6xvgat 2.Vn=0.6xV 1.6 1.0 51020 50100 np t,(ms) Fig 6 Surge on-state current Vs pulse length. Half- Fig. 7 Surge on-state current vs number of pulses sIne wave Half-sine wave. 10 ms 50Hz. G(t) 2.5A ≥15 Rectwaveform: f=60 Hz Po=3: for DC current 7 PGM=20 W;tp=1ms 10% 十十 t(GM) t(Gon) IFG [A] Fig 8 Recommendet gate current waveform Fig 9 Max peak gate power loss l1w=1500A di/dt (A/ps) Fig. 10 Recovery charge vs decay rate of on-state Fig 11 Peak reverse recovery current vS decay rate current of on -state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1027-05 Jan 02 page 5 of 6

5STP 07D1800 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1027-05 Jan. 02 page 5 of 6 Fig. 6 Surge on-state current vs. pulse length. Half￾sine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. I GM I Gon 100 % 90 % 10 % I GM ≈ 2..5 A I Gon ≥ 1.5 IGT diG/dt ≥ 2 A/µs t r ≤ 1 µs t p(IGM) ≈ 5...20µs diG/dt tr t p (IGM) I G (t) t t p (IGon) Fig. 8 Recommendet gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current

5sTP07D1800 26.4 34 53 2 center holes Removable 36X4 AC= Auxiliary cathode Faston connector Cable white 6.3×0.8 Fig 12 Device Outline Drawing ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABR ABB Switzerland Ltd DoC. No. 5SYA1027-05Jan 02 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone+41(0)585861419 Email abbsem@ch.abb.com Internet w. abbsem. com

5STP 07D1800 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Doc. No. 5SYA1027-05 Jan. 02 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com Fig. 12 Device Outline Drawing