西安交通大学：《电力电子变电技术》The Bipolar Junction Transistor

School of Computer Science and Electrical Engineering 17/05/01 The bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes)are involved in the flow of electricity The term Junction is because there are two pn unctions There are two configurations for this device n-type p-type n-type p-type n-type p-type Symbol NPN PNP Lecture 11 ENG1030 Electrical Physics and Electronics B./T Downs

ENG1030 Electrical Physics and Electronics B.Lovell/T.Downs School of Computer Science and Electrical Engineering 1 17/05/01 Lecture 11 The Bipolar Junction Transistor • The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity • The term Junction is because there are two pn junctions • There are two configurations for this device n-type p-type n-type NPN Symbol b e c p-type n-type p-type PNP Symbol b c e

School of Computer Science and Electrical Engineering 17/05/01 nPn and Pnp transistors NPN is more widely used majority carriers are electrons so it operates more quickly PNP is used for special applications we will concentrate on NPN The terminals of the transistor are labelled base Emitter and collector The emitter is always drawn with the arrow Collector Emitter Ba ase Emitter Collector Lecture 11 ENG1030 Electrical Physics and Electronics B./T Downs

ENG1030 Electrical Physics and Electronics B.Lovell/T.Downs School of Computer Science and Electrical Engineering 2 17/05/01 Lecture 11 NPN and PNP Transistors • NPN is more widely used – majority carriers are electrons so it operates more quickly • PNP is used for special applications – we will concentrate on NPN • The terminals of the transistor are labelled Base, Emitter, and Collector – The emitter is always drawn with the arrow. Base Emitter Collector Base Emitter Collector

School of Computer Science and Electrical Engineering 17/05/01 Asymmetry of Transistor Although in the nPn schematic, it looks like the collector and emitter can be reversed, in reality the device is very inefficient in reverse connection and has very little amplification gain) collector base emitter collector emitter base Is really n-type p-type n-type quite asymmetric NPN NPN Lecture 11 ENG1030 Electrical Physics and Electronics B./T Downs

ENG1030 Electrical Physics and Electronics B.Lovell/T.Downs School of Computer Science and Electrical Engineering 3 17/05/01 Lecture 11 Asymmetry of Transistor • Although in the NPN schematic, it looks like the collector and emitter can be reversed, in reality the device is very inefficient in reverse connection and has very little amplification (gain). n-type p-type n-type NPN is really collector base emitter collector base emitter NPN quite asymmetric

School of Computer Science and Electrical Engineering 17/05/01 Operation of nPn transistor In normal operation, the eb junction is forward biased and the BC junction is reverse biased The base region is very thin so the ratio L1: L2 is typically about 150:1 n Lecture 11 ENG1030 Electrical Physics and Electronics B./T Downs

ENG1030 Electrical Physics and Electronics B.Lovell/T.Downs School of Computer Science and Electrical Engineering 4 17/05/01 Lecture 11 Operation of NPN Transistor • In normal operation, the EB junction is forward biased and the BC junction is reverse biased • The base region is very thin so the ratio L1:L2 is typically about 150:1 DC DC n p n e b c Ie Ic Ib L1 L2

School of Computer Science and Electrical Engineering 17/05/01 Behaviour Forward biasing of the eb junction causes a heavy flow of majority carriers(electrons)from the n-type material into the base junction and also majority carriers (holes from the base region into the emitter region. We denote this current le The transistor is made so that nearly all the current le consists of a flow of carriers electrons from emitter to the base this is achieved by making the emitter much more heavily doped than the base n Lecture 11 ENG1030 Electrical Physics and Electronics B./T Downs

ENG1030 Electrical Physics and Electronics B.Lovell/T.Downs School of Computer Science and Electrical Engineering 5 17/05/01 Lecture 11 Behaviour • Forward biasing of the EB junction causes a heavy flow of majority carriers (electrons) from the n-type material into the base junction and also majority carriers (holes) from the base region into the emitter region. We denote this current Ie. • The transistor is made so that nearly all the current Ie consists of a flow of carriers (electrons) from emitter to the base. This is achieved by making the emitter much more heavily doped than the base. DC DC n p n e b c Ie Ic Ib

School of Computer Science and Electrical Engineering 17/05/01 Behaviour The base region is very thin so that most of the electrons attracted to this region pass straight through it (attracted by the collector which is positive relative to the base) before there is much chance of recombination with the base s holes Because of this, the collector current is very nearly equal in alue to le thus with the current directions shown ic=-ale where a is close to unity(e.g, a=0.98) Lecture 11 ENG1030 Electrical Physics and Electronics B./T Downs

ENG1030 Electrical Physics and Electronics B.Lovell/T.Downs School of Computer Science and Electrical Engineering 6 17/05/01 Lecture 11 Behaviour • The base region is very thin so that most of the electrons attracted to this region pass straight through it (attracted by the collector which is positive relative to the base) before there is much chance of recombination with the base’s holes. • Because of this, the collector current is very nearly equal in value to Ie. Thus with the current directions shown Ic=-aIe where a is close to unity (e.g., a=0.98). DC DC n p n e b c Ie Ic Ib

School of Computer Science and Electrical Engineering 17/05/01 Behaviour The current that does not go through the collector forms the base current so that we have Ib=-(1-a)le From this Typicallyβ=50to200 The parameter B is called the dc current gain and represents the current amplification of the transistor Indeed the use of the transistor as an amplifier is one of its main applications Another major application is using the transistor as a switch So what do they look like? Lecture 11 ENG1030 Electrical Physics and Electronics B./T Downs

ENG1030 Electrical Physics and Electronics B.Lovell/T.Downs School of Computer Science and Electrical Engineering 7 17/05/01 Lecture 11 Behaviour • The current that does not go through the collector forms the base current so that we have Ib=-(1-a)Ie. • From this Typically b=50 to 200 • The parameter b is called the DC current gain and represents the current amplification of the transistor. • Indeed the use of the transistor as an amplifier is one of its main applications • Another major application is using the transistor as a switch b a a = - = b 1 c I I So what do they look like?