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西安交通大学:《电力电子变电技术》Diodes Rectifier diode 1SR154400/1sR154600

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1SR154400/1sR154-600 Diodes Rectifier diode 1SR154400/1sR154600 EXternal dimensions(Units: mm) (1)General purpose rectification (2) Surge absorption
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1SR154400/1sR154-600 Diodes Rectifier diode 1SR154400/1sR154600 EXternal dimensions(Units: mm) 1)General purpose rectification 2) Surge absorption ● Features 1)Small surface mounting type ( PMDS 2)Outstanding reverse surge capability. ● Construction ROHM PMDS Silicon diffused junction JEDEC. SOD-106 O. @-Date of manufacture EX. 1999.2-+9.2 ● Absolute maximum ratings(a=25°C) Parameter Absolute peak L 1SR154-400 Peak reverse[1SR154-400 400 1sR154-600 Peak forward surge current 2 Junction temperature Storage temperature 55~+150 *1 When mounted on an alumina PCB board *2 60 Hz for 12 ● Electrical characteristics(a=25℃C) Conditions 11 r=1.0A sR154-400 Reverse current lR 1sR154600 VR=600V

1SR154-400 / 1SR154-600 Diodes Rectifier diode 1SR154-400 / 1SR154-600 zApplications 1) General purpose rectification 2) Surge absorption zFeatures 1) Small surface mounting type. (PMDS) 2) Outstanding reverse surge capability. 3) High reliability. zConstruction Silicon diffused junction zExternal dimensions (Units : mm) 0.1 CATHODE MARK 4.5±0.2 2.6±0.2 2.0±0.2 1.2±0.3 1.5±0.2 5.0±0.3 +0.02 −0.1 ROHM : PMDS EIAJ : − JEDEC : SOD-106 1 1 4 2 , ···Date of manufacture EX. 1999.2→9, 2 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit 1SR154-400 VRSM 500 V 1SR154-600 750 1SR154-400 VRM 400 V 1SR154-600 600 IO 1.0 A IFSM 30 A Tj 150 °C Tstg −55~+150 °C Absolute peak reverse voltage Peak reverse voltage Mean rectifying current ∗1 Peak forward surge current ∗2 Junction temperature Storage temperature ∗1 When mounted on an alumina PCB board ∗2 60 Hz for 1 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions VF − − 1.1 V IF=1.0A 1SR154-400 IR − − 10 µA VR=400V 1SR154-600 − − 10 VR=600V Forward voltage Reverse current

1SR154400/1sR154-600 Diodes ● Electrical characteristic curves(a=25°C) c125 REVERSE VOLTAGE: VR(V) BIENT TEMPERATURE: Ta (C) Fig. 1 Forward characteristics Fig 2 Reverse characteristics Fig 3 Derating curve u9 SINEWA 区852出u CYCLES at 60 Hz Fig. 4 Surge current characteristics(1) Fig 5 Surge current characteristics(2)

1SR154-400 / 1SR154-600 Diodes zElectrical characteristic curves (Ta=25°C) FORWARD VOLTAGE : VF (V) FORWARD CURRENT : IF (A) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10µ 100µ 1m 10m 100m 1 Fig. 1 Forward characteristics Ta=125°C Ta=75°C Ta=25°C Ta=−25°C REVERSE VOLTAGE : VR (V) REVERSE CURRENT : IR (A) 0 200 300 400 500 600 100 1n 10n 100n 1µ 10µ Fig. 2 Reverse characteristics Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 0 0 1.0 0.8 0.6 0.4 0.2 25 50 100 150 200 AVERAGE RECTIFIED CURRENT : IO (A) AMBIENT TEMPERATURE : Ta (°C) Fig. 3 Derating curve CAPACITIVE LOAD RESISTIVE AND INDUCTIVE LOAD 0 50 40 30 20 10 1 3 5 10 30 50 100 CYCLES at 60 Hz SURGE FORWARD CURRENT : IFSM (A) Fig. 4 Surge current characteristics (1) ISURGE 1/60 sec SINE WAVE REPETITIVE 0 50 40 30 20 10 10m 100m 1 PULSE WIDTH (sec) SURGE FORWARD CURRENT : ISURGE (A) Fig. 5 Surge current characteristics (2) ISURGE PULSE WIDTH SINE WAVE SINGLE PULSE

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