西安交通大学：《工程训练之—工业系统的测量》（英文版）TO-220 Plastic-Encapsulate Transistors

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO. LTD To-220 Plastic-Encapsulate Transistors Haolin 2SC2073 TRANSISTOR (NPN) To-220 FEATURES Power dissipation 2. COLLECTOR 15W(amb=250 3. EMITTER Collector current 1.5A 123 Collector-base voltage VBR)CBO: 150 V Operating and storage junction temperature range T,Ts:-55℃to+150℃ ELECTRICAL CHARACTERISTICS(Tamb=25c unless otherwise specified) Parameter Symbol Test conditions MN「TYP| MAX UNIT Collector-base breakdown voltage (BR)CBO Ic=100uA, lE=O 150 Collector-emitter breakdown voltage c=lmA. IB=0 Emitter-base breakdown voltage VBR)EBO lE=100HA, Ic=0 5 Collector cut-off curren Vcb=120V. le=O 10 Emitter cut-off current VEB=5V Ic=0 Dc current gain hF(1) Vce=10V, Ic=500mA Collector-emitter saturation voltage Ic=500mA, IB=50mA 15V ve Vce=10V, Ic=500mA 0.65 085V Transition frequency Vce=10V, Ic=500mA Collector output capacitance VcB=10V, IE=0, f=1MHz 35

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.5 W (Tamb=25℃) Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 150 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 150 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 150 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=120V, IE=0 10 µA Emitter cut-off current IEBO VEB=5V, IC=0 10 µA DC current gain hFE(1) VCE=10V, IC=500mA 40 140 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 1.5 V Base-emitter voltage VBE VCE=10V, IC=500mA 0.65 0.85 V Transition frequency fT VCE=10V, IC=500mA 4 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 35 pF 1 2 3 TO-220 1. BASE 2. COLLECTOR 3. EMITTER