西安交通大学：《工程训练之—工业系统的测量》（英文版）TO-92 Plastic-Encapsulate Transistors

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO. LTD TO-92 Plastic-Encapsulate Transistors Haolin S9013 TRANSISTOR(NPN) TO-92 1. EMITTER FEATURE Power dissipation 2. BASE 0625W(Tamb=25℃ 3. COLLECTOR Collector current 0.5A Collector-base voltage 40V Operating and storage junction temperature range T,Tg:-55℃to+150℃ ELECTRICAL CHARACTERISTICS(Tamb=25C unless otherwise specified) Parameter Symbo Test conditio TYP MAX UNIT Collector-base breakdown voltage V(BR)cBo c=100μAlE=0 Collector-emitter breakdown voltage V(BR)cEo Emitter-base breakdown voltage V(BR)EB lE= 100HA, Ic=0 5 Collector cut-off current vc=40V,l=0 0.1 Collector cut-off current VcE=20V, IE=O Emitter cut-off current VEB= 5V. Ic=0 0.1 A VcE=lV Ic=50mA 400 DC current gain FE(2) VcE=1V,Ic=500mA40 Collector-emitter saturation voltage CE(sat) Ic= 500 mA, IB= 50mA 0.6 Base-emitter voltage VBE(sat) Ic= 500 mA. Ib= 50mA 1.2 VcE=6V, Ic=20mA Transition frequency MHZ f=30MHz CLASSIFICATION OF hFE(1 Rank D E H Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO VCB= 40V, IE=0 0.1 µA Collector cut-off current ICEO VCE=20V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA hFE(1) VCE=1V, IC=50mA 64 400 DC current gain hFE(2) VCE=1V, IC= 500mA 40 Collector-emitter saturation voltage VCE(sat) IC= 500 mA, IB= 50mA 0.6 V Base-emitter voltage VBE(sat) IC= 500 mA, IB= 50mA 1.2 V Transition frequency f T VCE=6V, IC=20mA, f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank D E F G H I J Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400 1 2 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR