《电路》（英文版）18-5 Combination of i-v characteristics

818-5 Combination of i-p characteristics 1. Series combination DID composite D U1U2U1+U2) composite 2. Parallel combination D1 D2 (1+)

§18-5 Combination of i-v characteristics 1. Series combination 2. Parallel combination D1 D2 − +  1 − +  2 − +  i D1 D2 i  composite 1  2 ( ) 1 +2 D1 D2 i  composite 1 i 2 i ( ) 1 2 i + i D1 D2 − +  i 2 i 1 i

3. Voltage bias(偏置)4. Current bias 5. Inversion(倒置) Ⅰ→→ ND D D i=∫(U)+i i=∫(u)i=f(U-,) fop) i=f(o)

i − +  − +  D − +  s D  s i  i = f () ( ) ( ) D s f i f    = = − i  i = f () s i = f () + i s i 3. Voltage bias(偏置) i − +  D i  5. Inversion(倒置) i − +  D D i s i 4. Current bias

Example3: Diode logic gates(逻辑门) SB OLE正 ①a 615 signifies that the voltage is less than 0"signifies that the voltage is greater than or equal to 110 加o (

Example 3: Diode logic gates(逻辑门). sA  sB  s  i out   sB  sA  s  i out   sA  sB  s  i out   out  s  sA  sB  s  i out   “1” signifies that the voltage is less than vs . “0” signifies that the voltage is greater than or equal to vs .  sA  sB  out 0 0 0 0 0 1 1 1 1 1 1 1 − + − + − + s  sA  sB  i R − + out 