《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_IRF530R[1]

430己己71005399372T 的严八向s ■HAS RF530/531/532533 iRF530R/531R/532R/533R N-Channel Power MOSFETs May 1992 Avalanche Energy Rated* Features Package 12A and 14A, 80V-100V TO-220AB TOP VIEW rDs(on)=0.162 and 0.230 Single Pulse Avalanche Energy Rated DRAN FLANG日 Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Description The IRF530, IRF531,IRF532, and IRF533 are n-channelTerminal Diagram enhancement-mode silicon-gate power field-effect transis. rs. IRF53OR, IRF531R, IRF532R and IRF533R types are N-CHANNEL ENHANCEMENT MODE dvanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown blanche mode of switching converters, motor drivers, relay drivers, and drivers ng high speed and low gate-drive power. These types can be operated directly from integrated circuits The IRF types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings(Tc=+250C), Unless Otherwise Specified RF531 RF532 RF533 RF53OR tRF531R IRF532R IRF533R UNITS Gate Voltage(RGs=20kn) ontinuous Drain Current ±20 maximum Power DIssipation Linear Derating Factor. TJ, TSTG-55to+175-55to+175-55to+175-55t+175oc o063"(1. 6mm)from case for NOTES: 25°c,L甲530HRGs=250, 3. Repetitive rat width limed by maximum junction temperature Curve(Figure 5. R Suffix Types Only CAUTION: These devices are sensitive to electrostatic discharge. Proper L.C. handling procedures should be followed Copyright O Harris Corporation 1992 File Number 1575.2
查询IRF530供应商 查询IRF530供应商

430己己71053日4bb■HAS /RF530/RF531, IRF532, /RF533 /RF530R, IRF531R, IRF532R, IRF533R ectrical Characteristics Tc= 250C, Unless Otherwise Specified TEST CONDITIONS MIN TYP MAX UNITS oltage BVDSS VGs=OV,D=250pA 531/533RF531R/533R TH, -VGS. ID=250A Gate-Source Leakage Reverse lGss VGs=-2oV Zero Gate Voltage Drain Current Dss VDS=Max Rafing, VGs=OV Vps= Max Rating xO. 8, VGs=OV, D(ON)VDs>ID(ON) XrDS(ON) Max, VGS=10V S(ON)VGS=10V, D-83A 530R/531R RF532/533,RF532R533R 0200239 Forward Transconductance (Note 2) s250vb=83A 5176 See Figure 1 (MOSFET switching times Delay Time Gate-Source Gate-Drain) Gate charge is essentially independent of operating temperature y nc Modified MOSFET symbol showing the inductances Internal Source Inductanc ocs Mounting surface flat, smooth and grease oC/ JA Free air operation oC/w Source Drain Diode Ratings and Characteristics Source Current (Body Diode)( Note 3) IsMP-Njunc e Forward Voltage(Note 2) TTJ=+250C. IF=14A, dlF/dt=100A/us Reverse Recovered Charge J=+25°c=14AdF/t=100A time is negligible. Turn-o NOTES:1.TJ=+25°阳+150°c RGs=25n, PEAK 14A (See Figure 15 edance Curve(Figure

430己己?100539955T己■HAS IRF530, IRF531, IRF532, IRF533 IRF53OR, IRF531R, IRF532R, IRF533R Performance Curves VGS GATE-TO-SOURCE FIGURE 1. TYPICAL OUTPUT CHARACTERISTICS FIGURE 2. TYPICAL TRANSFER CHARACTERISTICS 103t 出区z VOs ORAIN-TO-SOURCE VOLTAGE IVaL TS)o FIGURE 3. TYPICAL SATURATION CHARACTERISTICS FIGURE 4. MAXIMUM SAFE OPERATING AREA CUTY FACTOR, D-ty/t t2 EAK TJ PoM X 2thuc·te 01 t1. RECTANGULAR PULSE DURATION (SECONDS) FIGURE 5. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 4288

430己己710053号5b43号■HAS IRF530, /RF531,/RF532, /RF533 /RF530R, /RF53 1R, IRF532R, IRF533R Performance Curves (continued) os e 50v FIGURE 6. TYPICAL TRANSCONDUCTANCE VS DRAIN FIGURE 7. TYPICAL SOURCE-DRAIN DIODE FORWARD T JUNCTION TEMPERATURE oC FIGURE 8. BREAKDOWN VOLTAGE VS TEMPERATURE FIGURE 8. NORMALIZED ON-RESISTANCE vS MPERATURE 994tb口 uB> Vps. DRAIN-TO-5CURCE VOL I AGE /VOL TS: 102 AGURE 10. TOLTALE APACITANCE VS DRAIN-TO-SOURCE FGURE GATE-TO-SOU 4289

430己己71005317375■HAS IRF530, IRF531, IRF532, IRF533 RF53OR, IRF531R, IRF532R, IRF533R Performance Curves(Continued) 否8。 FIGURE 12. TYPICAL ON RESISTANCE VS DRAIN CURRENT FIGURE 13. MAXIMUM DRAIN CURRENT VS CASE A\E1"0.5 BVDss Ec-075 Boss FIGURE 143, CLAMPED INDUCTIVE TEST CIRCUIT FIGURE 15a. UNCLAMPED ENERGY TEST CIRCUIT FIGURE1 4b. CLAMPED INDUCTIVE WAVEFORMS FIGURE 15b. UNCLAMPED ENERGY WAVEFORMS CURREN REGULATO Ro BATTERY 1.5mA AMPUNG RESISTOR AMPUNG RESISTOR FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. GATE CHARGE TEST CIRCUIT 4290
按次数下载不扣除下载券;
注册用户24小时内重复下载只扣除一次;
顺序:VIP每日次数-->可用次数-->下载券;
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_DAC0832.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_4027B.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_4518.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_cd4553.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_555.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_SN74LS390.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74LS373中文资料.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74LS249 中文资料.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74LS194中文资料.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74LS163 中文资料.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74LS161 中文资料.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74LS123 中文资料.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74LS107中文资料.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74LS76.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74LS75.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74LS74 中文资料.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74LS32 中文资料.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74LS14中文资料.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74ls08.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_74LS04中文资料.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_IRF9530[1].pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_lm358.pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_1N60[1].pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_实验常用元器件[2].pdf
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_ROM32X1.doc
- 《模拟与数字电路实验》参考资料:元件和实验系统_器件资料_数字集成电路的分类.pdf
- 《模拟与数字电路实验》参考资料:示波器基础_无源电压探头的校准.pdf
- 《模拟与数字电路实验》参考资料:示波器基础_示波器探头说明(Tektronix 初级读本——探头入门).pdf
- 《模拟与数字电路实验》参考资料:接地概念_接地的基本概念.pdf
- 复旦大学:《光子学器件与工艺 Photonics Devices and Technology》教学案例_VCSEL的封装技术.pdf
- 复旦大学:《光子学器件与工艺 Photonics Devices and Technology》教学案例_ASE optical source.pdf
- 复旦大学:《光子学器件与工艺 Photonics Devices and Technology》教学案例_单芯准直器的生产工艺流程.doc
- 复旦大学:《光子学器件与工艺 Photonics Devices and Technology》教学案例_晶振片知识——镀膜人员必备之知识.pdf
- 复旦大学:《光子学器件与工艺 Photonics Devices and Technology》教学案例_眼图知识简介.pdf
- 复旦大学:《光子学器件与工艺 Photonics Devices and Technology》教学案例_WDM thin film filter.pdf
- 复旦大学:《光子学器件与工艺 Photonics Devices and Technology》教学案例_平面光波导分路器及其在无源光网络中的应用 PLC Splitter In PON System.pdf
- 复旦大学:《光子学器件与工艺 Photonics Devices and Technology》教学案例_光纤NA的测试.pdf
- 复旦大学:《光子学器件与工艺 Photonics Devices and Technology》参考教材_光无源器件(PDF电子书,共八章).pdf
- 复旦大学:《光子学器件与工艺 Photonics Devices and Technology》文献资料_Si-based LED.pdf
- 复旦大学:《光子学器件与工艺 Photonics Devices and Technology》文献资料_Let there be light.pdf