《模拟与数字电路实验》参考资料：元件和实验系统_器件资料_IRF9530[1]

直彩200568 Data Sheet No. PD-9320F INTERNAT IONAL RECTIFIER 73-21 INTERNATIONAL RECTIFIER<R HEXFET TRANSISTORS IRF95SO IRF9SS1 -Channel IRF95c2 F9三 100 Volt 0.3 Ohm HEXFET Features: TO-220AB Plastic Package The HEXFET technology is the key to Internatlonal Rectifiers Compact Plastic Package ■ Fast Switching and unique processing of the HEXFET design achieve very low on- Low Drive Current device ruggedness. Ease of Paralleling t te re Stability channel HEXFETs such as voltag Product Summary Part Number complement to the N-Channel IRF520 HEXFET. RF953010V0309 P-Channel HEXFETs are intended for use in power stages where RF9532 0.409 Appllcations include motor control, audio amplifie tched mode 60v 0.40g2 converters, control circuit and pulse amplifiers CASE STYLE AND DIMENSIONS 0s4帕04 提器 1054(0415) MAX ERU I-GA 1509(0.594

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1lEo4554520085890 IRF9530, IRF9531, IRF9532, IRF9533 Devices -39-21 INTERNATIONAL RECTIFIER Absolute Maximum Ratings RF933 ce voltage① IRGs 20 kn)o tb@Tc=25° PD G Tc-25CM ductive Current, Clamped ee Fig. 15 and 16)L= 100uH Storage Temperature Range 55to150 300(0.083 in(1.6mm] from case for 10sh Electrical Characteristics @Tc= 25C(Unless Otherwise Specified) TYpe Min. Typ. Max.Units Test Conditions BVoss Drain-Source Breakdown Voltage ID -.250HA lGss Gate-Source Leakage ForwardALL I-500 VGs=-2oV Gss Gate-Source Leakage Reverse LALL lDss Zero Gate Voltage Drain Current =0V vps -10V Rosion Static Drain- Source On-state 20 I su Vos>Don! x Roston) max,D=-6 管 300 5V,f= 1.0 MHz See Fig. 10 Transfer Capacitance On Delay Time Voo 0.5.D"6.5A, Z0-50n tdfoff)Turn-Off Delay Time independent of operating temperature. (GateSource Plus Gate Drain) 25 13 independent of operating temperature. 112 Internal Drain Inductance 3,6 on tab ALL Ls Internal source inductance 7.5 Measured from the 6mm saurce Thermal Resistance 167Kw RihcsCase-to-Sink ,0 Mounting surface flat, smooth, and greased. RunJaJunction-to-Ambient Typical socket mount c338

1E085545己0囗85屮0b IRF9530, IRF9531, IRF9532, IRF9533 Devices Source-Drain Diode Ratings and Characteristics INTERNATIONAL RECTIFIER T-39-21 Body Diode Forward voltage② Tc=25°cls-12A,vcs"M Reverse Recovery Time =150c=-12A Intrinsic turn-on time is negligible. Turn-on speed is substantially 八W ①TJ=25°cto150°c.② Pulse Test: Pulso width t300, Duty Cycle≤2%.③Re ④Kw〓scw Vos, DRAIN-TO-SOUACE VOLTAGE VOLTS VGS GATE- TOSOURCE VOLTAGE IVOLTS Fig. 1-Typical Output Characteristics Fig 2-Typical Transfer Characteristics GLE PULSE ■■T■ Vos DRAIN-TO-SOURCE VOLTAGE (VOLTSI Fig 3- Typical Saturation Characteristics Fig. 4-Maximum Safe Operating Area c339

1ED4855452000a5q8 IRF9530, IRF9531, IRF9532, IRF9533 Devicee T-39-21 INTERNATIONAL RECTIFIER 02动 型LL 1. OUTY FACTOR 0 DEG C/H SQUARE WAVE PULSE OURATION ISECONDS] Fig. 5- Maximum Effective Transient Thermal Impedance, Junction-to Case Vs Pulse Duration at PULSE TEST. VsO, SOURCE TOORAIN VOLTAGE (VOLTS) Fig. 6-Typical Transconductance Vs Drain Current Fig. 7- Typical Source-Drain Diode Forward Voltage TJ, JUNCTION TEMPERATURE fC) TJ, JUNCTION TEMPERATURE oCI Fig. 8- Breakdown Voltage Vs. Temperature Fig. 9-Normalized On-Resistance Vs. Temperature c340

11E 48s545己0B5?己 IRF9530, IRF9531, IRF9532, IRF9533 Devices INTERNAT IONAL RECTIFIER +Cpdr Cds SHORTE T39-21 + Cod AIN-TO-SOURCE VOLTAGE VOLT Fig 10-TYpical Capacitance Vs Drain-to-Source Voltage Fig. 11-Typical Gate Charge Vs Gate-to-source Voltage RF9530.g RF95329533 238Hm Fig 12- Typical On-Resistance Vs Drain Current Fig. 13-Maximum Drain Current Vs Case Temperature VARY lo TO OBTAIN UIRED PEAK IL Flg. 15-Clamped Inductive Test Clrcult Fig. 14-Power Vs, Temperature Derating Curve Fig, 16-Clamped Inductive Waveforms

1LED4855452000531 IRF9530, IRF9531, IRF9532, IRF9533 Devices T-39-21 INTERNATIONAL RECTIFIE SAME TYPE SOKO TTERY Fig. 17-Switching Time Test Circuit Fig. 18-Gate Charge Test Circuit E臣 110130150 TEMPERATURE ( c *Fig 19- Typical Time to Accurnulated 1% Failure Fig 20- Typical High Temperature Reverse Bias Tho data shown is correct as af April 15, 1987. This information uarterly basis; for the latest reliability data, please contact your local IR field office