《电力电子技术》课程教学资源（参考资料）IRFP450

ISHAY IRFP450,SiHFP450 Vishay Siliconix Power MOSFET PRODUCT SUMMARY FEATURES Rating s(V) 500 ⑧ (on)( Vas 10V 0.40 che Ratec (nc ntral Mounting Hole RoHS Fast Sv Ease of Par ing Simple Drive Requirements Lead (Pb)-free Available T0-247 DESCRIPTION ruggedized device design.low on-resistance and commerial-industria 8-220dey es.The TO-247 is similar but superior to the N-Channel MOSFET greater creepage d between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package Lead(Pb)-free SiHFP450-E3 SnPb SIHFP450 ABSOLUTE MAXIMUM RATINGS Tc =25C,unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage Vos 500 Gate-Source Voltage VGs ±20 Continuous Drain Current lo 87 Linear Derating Factor 15 W/PC EAS 760 m Tc=25℃ 190 Peak Diode Recovery dV/dts dV/dt 3.5 Vins Operating Junction and Storage Temperature Range TJ,Tsta -55to+150 Soldering Recommendations (Peak Temperature) for 10s 0 Mounting Torque 6-32 or M3 screw Notes d.1.6 mm from case. Pb containing terminations are not RoHS compliant,exemptions may apply 127160 www.vishay.com

Document Number: 91233 www.vishay.com S-81271-Rev. A, 16-Jun-08 1 Power MOSFET IRFP450, SiHFP450 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 7.0 mH, RG = 25 Ω, IAS = 14 A (see fig. 12). c. ISD ≤ 14 A, dI/dt ≤ 130 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP450PbF SiHFP450-E3 SnPb IRFP450 SiHFP450 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 14 TC = 100 °C 8.7 A Pulsed Drain Currenta IDM 56 Linear Derating Factor 1.5 W/°C Single Pulse Avalanche Energyb EAS 760 mJ Repetitive Avalanche Currenta IAR 8.7 A Repetitive Avalanche Energya EAR 19 mJ Maximum Power Dissipation TC = 25 °C PD 190 W Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply

IRFP450,SiHFP450 VISHAY Vishay Siliconix THERMAL RESISTANCE RATINGS AMETER TYP. MAX UNIT on-to- 40 se-to-Sink,Flat,Grea ed Surface 0.24 Maximum Junction-to-Case (Drain) 0.65 SPECIFICATIONS TJ=25C,unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage Vos VGs =0 V,lo =250 MA 500··v Vos/Tj 025℃，lb=1m 0.63 rce Thresh Vas(h) Vos=Vas.Ip=250 HA 2.0 4.0 Gate-Source Leakage IGss VGs■±20V ±100nA Vps =500 V.VGs =0V 25 Zero Gate Voltage Drain Current loss Vos 400 V,Vos =0V.T 125C 250 A Drain-Source On-State Resistance VGs =10V In=8.4AD 0.400 Forward Transconductance Vos=50V,lb=8.4A地 93 Dynamic Input Capacitance 2600 Output Capacitance Capacitance 340 150 Gate-Source Charge Vas-10V 41 20 nC Gate-Drain Charge 0g 80 Turn-On Delay Time 17 Rise Time 47 ns Turn-Oft Delay Time Ro1 Fall Time 44 Intemal Drain Inductance 名 5.0 nH 13 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current 14 Pulsed Diode Forward Currente 56 Body Diode Voltage T1=25℃.s=14AVG5=00 1.4y Body Diode Reverse Recovery Time 540810ns T=25C.Ie=14 A.dl/dt 100 A/usb Body Diode Reverse Recovery Charge 4.87.2uC vard Tumn-On Time Intrinsic tum-on time is negligible (tum-on is do nated by Ls and Lo) Repet www.vishay.com g8R688

www.vishay.com Document Number: 91233 2 S-81271-Rev. A, 16-Jun-08 IRFP450, SiHFP450 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - °C/W Maximum Junction-to-Case (Drain) RthJC - 0.65 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 µA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8.4 Ab - - 0.40 Ω Forward Transconductance gfs VDS = 50 V, ID = 8.4 Ab 9.3 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 2600 - Output Capacitance Coss - 720 - pF Reverse Transfer Capacitance Crss - 340 - Total Gate Charge Qg VGS = 10 V ID = 14 A, VDS = 400 V, see fig. 6 and 13b - - 150 Gate-Source Charge Qgs - - 20 nC Gate-Drain Charge Qgd - - 80 Turn-On Delay Time td(on) VDD = 250 V, ID = 14 A, RG = 6.2 Ω, RD = 17 Ω, see fig. 10b - 17 - ns Rise Time tr - 47 - Turn-Off Delay Time td(off) - 92 - Fall Time tf - 44 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact - 5.0 - nH Internal Source Inductance LS - 13 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode - - 14 A Pulsed Diode Forward Currenta ISM - - 56 Body Diode Voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 Vb - - 1.4 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb - 540 810 ns Body Diode Reverse Recovery Charge Qrr - 4.8 7.2 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G

VISHAY IRFP450,SiHFP450 Vishay Siliconix TYPICAL CHARACTERISTICS 25C,unless otherwise noted Vos.Drain-to-Source Voltage(volts) Ves.Gate-to-Source Voltage (volts) Fig.1-Typical Output Characteristics,Te =25C Fig.3-Typical Transfer Characteristics VG 0 Vos,Drain-to-Source Voltage (volts) aure（c Fig.2-Typical Output Characteristics,Tc=150c Fig.4-Nor 8o29969128 ww.vishay.com

Document Number: 91233 www.vishay.com S-81271-Rev. A, 16-Jun-08 3 IRFP450, SiHFP450 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature

IRFP450,SiHFP450 VISHAY Vishay Siliconix Cod.Cas SHORTE √so.Source-to-Drain Voltage(vols】 Fig.5-Typl ig.7-Typ ical Source-Drain Diode Forward volta G.Total Gate Charge (nC) Ds.Dr volts Fig.6-Typical Gate Charge vs.Gate-to urce Voltage mum Sa ting Are www.vishay.com S9827R风69a

www.vishay.com Document Number: 91233 4 S-81271-Rev. A, 16-Jun-08 IRFP450, SiHFP450 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area

VISHAY IRFP450,SiHFP450 Vishay Siliconix (左1ov Fig.10a-Switching Time e Test Circui Tc.Case Temperature(C) Fig.9-Maximum Drain Current vs.Case Temperature Fig.10b-Switching Time Waveforms OUTY FACTOR,D-ti/t PEAK T:-PON x ZthjcTc Fig.11-Maximum ec Junction-to-Case Vos As- Fig.12a-Unclamped Inductive Test Circuit Fig.12b-Unclamped Inductive Waveforms 8o29969128

Document Number: 91233 www.vishay.com S-81271-Rev. A, 16-Jun-08 5 IRFP450, SiHFP450 Vishay Siliconix Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V + - VDS VDD VDS 90 % 10 % VGS t d(on) t r t d(off) t f RG IAS tp 0.01 Ω D.U.T L VDS + - VDD A 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp

IRFP450,SiHFP450 VISHAY Vishay Siliconix Starting TJ.Junction Temperature(C) Fig.12c-Maximum Avalanche Energy vs.Drain Current 03 ①tn Charge- Fig.13a-Basic Gate Charge Waveform Fig.13b-Gate Charge Test Circuit www.vishay.com S827R693

www.vishay.com Document Number: 91233 6 S-81271-Rev. A, 16-Jun-08 IRFP450, SiHFP450 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS I G I D 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. + -

VISHAY IRFP450,SiHFP450 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit ntrolled by.T. river gate drive -P.W D=% VGS=10 V ov ③D.uT. a6 ductor current Ripple s5% Ves =5 V for logic level devices Fig.14-For N-Channel dsta,see http:/www.vishay.com/ppg?91233 ww.vishay.com

Document Number: 91233 www.vishay.com S-81271-Rev. A, 16-Jun-08 7 IRFP450, SiHFP450 Vishay Siliconix Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91233. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V* VDD I SD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - + + - + - - * VGS = 5 V for logic level devices Peak Diode Recovery dV/dt Test Circuit VDD • dV/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by duty factor "D" • D.U.T. - device under test D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer RG

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Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners