《电力电子技术》课程教学资源（参考资料）MOS管 8N60

UIC UNISONIC TECHNOLOGIES CO.LTD 8N60 Power MOSFET 7.5 Amps,600/650 Volts N-CHANNEL POWER MOSFET ■DESCRIPTION T0-220 switching time.low gate charge.low on-state resistance and have cne char stics.Ihis power MOSFET is T0-220 and bridge circuits. ■FEATURES Pb-free plating product number:8N60L s=10V vrse ransfer capacitance (12.0pF) .Avalanche eneray specified Improved dvdt capability.high ruggedness ■SYMBOL 2.Drain 1.Gate o 3.Source ◆ ORDERING INFORMATION Ordering Number Lead Free Plating Package Pin Assignment Packing Norma h 860-xT3T 8N60LX-TE3-T TO-220FGDs Tube N60L-TA3 acking Type ②TA.20.TF3:T020F 3)Drain-Source Vollage (3)A600M,B650W (4)Lead Plating (4)L:Lead Free Plating.Blank:Pb/Sn gopyignte02o57taonicTechnologlesco,Ld

UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2007 Unisonic Technologies Co., Ltd QW-R502-115,B 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. „ FEATURES * RDS(ON) = 1.2Ω @VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL 1.Gate 3.Source 2.Drain *Pb-free plating product number: 8N60L „ ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 8N60-x-TA3-T 8N60L-x-TA3-T TO-220 G D S Tube 8N60-x-TF3-T 8N60L-x-TF3-T TO-220F G D S Tube

8N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS(Tc=25C.unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Voss Gate-Sourre Voltane Avalanche Current (Note 1) 75 A Continuous Drain Current c=25℃ 7.5 Tc=100°g 4.6 ulsed Drain Current (Note 1 E valanche Energy petitive (Note 1) 147 m Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 Vins Power Dissipation +15n perating Temperature 55~+150 Storage Temperature TsT 55-+150 Note are those THERMAL DATA PARAMETER DAT万 T0.220 R26 unction-to-Ambient TO-220F 62.5 Junction-to-Case T0-220 0.85 T0-220F 2.0 ELECTRICAL CHARACTERISTICS (Tc=25C.unless othenwise specified) SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVoss s=0V,lb=250A Drain-Source leakage current os 600 V,Ves=0V 10A Gate-Source Leakage Current Forward Gs=30 V.Vos=0V 100nA everse Gs=-30 V.VDs=0V -100nA own Voltage Temperature Coefficient 250 uA Referenced to 25C 0.7 ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Input Capacitance 9651255pF Output Capacitance 25 V.Vas=0 V.f=1MHz ING CHARACTERISTICS urn-On Delay Time 16.545n5 -On Rise Time 300V,lb=7.5A,Re=254 130ns ay Time 4,5 8117四 ns otal Gate Charne 2838nc ate-Source charge 480V.ln=7.5A,Vcs=10V 4.5 Note 4,5) Gate-Drain Charge 12 nC UNSONIC TECHNOLOGIES CO,LTD 20f8 www.unisonic.com.tw OB602-1158

8N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw QW-R502-115,B „ ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 8N60-A 600 V Drain-Source Voltage 8N60-B VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 7.5 A TC = 25°C 7.5 A Continuous Drain Current TC = 100°C ID 4.6 A Pulsed Drain Current (Note 1) IDM 30 A Single Pulsed (Note 2) EAS 230 mJ Avalanche Energy Repetitive (Note 1) EAR 14.7 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 147 W Power Dissipation TO-220F PD 48 W Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL RATING UNIT TO-220 62.5 °C/W Junction-to-Ambient TO-220F θJA 62.5 °C/W TO-220 0.85 °C/W Junction-to-Case TO-220F θJC 2.6 °C/W „ ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 8N60-A 600 V Drain-Source Breakdown Voltage 8N60-B BVDSS VGS = 0 V, ID = 250 µA 650 V Drain-Source Leakage Current IDSS VDS = 600 V, VGS = 0 V 10 µA Forward VGS = 30 V, VDS = 0 V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250 µA, Referenced to 25°C 0.7 V/℃ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 3.75 A 1.0 1.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 965 1255 pF Output Capacitance COSS 105 135 pF Reverse Transfer Capacitance CRSS VDS = 25 V, VGS = 0 V, f = 1MHz 12 16 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 16.5 45 ns Turn-On Rise Time tR 60.5 130 ns Turn-Off Delay Time tD(OFF) 81 170 ns Turn-Off Fall Time tF VDD = 300V, ID = 7.5 A, RG = 25Ω (Note 4, 5) 64.5 140 ns Total Gate Charge QG 28 36 nC Gate-Source Charge QGS 4.5 nC Gate-Drain Charge QGD VDS= 480V,ID= 7.5A, VGS= 10 V (Note 4, 5) 12 nC

8N60 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forv VsD Vas =0V.Is =7.5A 14V FDrain-Source Diod s 7.5A Maximum Pulsed Drain-Source Diode 30A orward Reverse Recovery chame /dt 100 A/us (Note 4) 3.4c Notes:1.Repetitive Rating:Pulse width limited by T. 025e25 4.Pulse Test:Pulse.Duty cycles% 5.Essentially independent of operating temperature ww.unisonic.com.tw

8N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw QW-R502-115,B „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 7.5 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7.5 A Maximum Pulsed Drain-Source Diode Forward Current ISM 30 A Reverse Recovery Time tRR 365 ns Reverse Recovery Charge QRR VGS = 0 V, IS = 7.5 A, dIF/dt = 100 A/µs (Note 4) 3.4 µC Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 7.3mH, IAS = 7.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.5A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature

8N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.u.T. 0 ·dvldt by R Vas DU Fig.1A Peak Diode Recovery dv/dt Test Circuit () P.W. Period 入N 01 Vas=10V Body Dod F urrent ou di/d Body Diode Reverse Current Body Diode Recovery dv/dt our, Body Diode Foward Voltage Drop Fig.1B Peak Diode Recovery dv/dt Waveforms 4of8 www.unisonic.com.tw OW-R502-115

8N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw QW-R502-115,B „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDD Driver VGS RG - VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. Period D= VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) - + VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit Fig. 1B Peak Diode Recovery dv/dt Waveforms

8N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) D.U.T. Fig.2A Switching Test Circuit Fig.2B Switching Waveforms G 10 0.2 F 0.34F DUT Charge Fig.3A Gate Charge Test Circuit Fig.3B Gate Charge Waveform D.U.T. Fig.4A Unclamped Inductive Switching Test Circuit Fig.4B Unclamped Inductive Switching Waveforms ww.unisonic.com.tw

8N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw QW-R502-115,B „ TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform D.U.T. RD 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

8N60 Power MOSFET TYPICAL CHARACTERISTICS 100 e Characteristics Transfer Characteristics 0 50月 0.1 Pulse Tes =25 0.1 0.1 8 10 Drain-to-Source Voltage,Vos (V) Source Voltage.Ves (V 0n-ResistaneaYganecosgran Curren BodyDoaeFoneaeY tage vs.Sour 6 10 3 2 Note:T=25℃ 15 20.02040.60.81.01.2141.61.8 Drain Current,Ip(A) Source-Drain Voltage.Vn(V) Gate chare characteristics 12 =300 /s=4804 V=120V 700 500 No Note:I =8A 01 510152025 30 Dra SourceVoltage.Vos(V Total Gate Charge.Qn(nC) UTC UNISONIC TECHNOLOGIES CO.,LTD www.unisonic.com.tw

8N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw QW-R502-115,B „ TYPICAL CHARACTERISTICS 0 Drain-Source On-Resistance, R 0 DS(ON) (ohm) Drain Current, ID (A) 5 1 2 4 5 6 On-Resistance Variation vs. Drain Current and Gate Voltage 3 10 15 20 1 0.1 0.2 Source-Drain Voltage, VSD (V) Reverse Drain Current, IDR (A) Body Diode Forward Voltage vs. Source Current 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 150℃ 25℃ Notes: 1. VGS=0V 2. 250µs Test VGS=20V VGS=10V Note: TJ=25℃ 1900 0 0.1 Drain-SourceVoltage, VDS (V) 1700 500 1 10 1500 1300 Capacitance Characteristics (Non-Repetitive) 0 Total Gate Charge, QG (nC) 5 15 25 8 10 12 10 6 4 2 0 VDS=120V VDS=300V VDS=480V 20 Gate Charge Characteristics 700 Ciss Coss Crss Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Notes: 1. VGS=0V 2. f = 1MHz 1100 900 300 100 30 Note: ID=8A

8N60 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) On-Resistance Junction Temperature o 1.1 2.0 10 10 Note 0.5 2.l0=250uA 26410 100 -50 50100150200 Junction Temperature.T(C) m Safe Operating Are 100 100 25 50 75100 125 Drain-Source Voltage,Vos(V) Case Temperature,Tc (C) Transient th ermal Response 0.01 105 113 Square Wave Pulse Duration,t(sec ww.unisonic.com.tw

8N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R502-115,B „ TYPICAL CHARACTERISTICS(Cont.) -100 Junction Temperature, TJ (℃) -50 50 100 150 200 1.2 0 1.1 1.0 0.9 0.8 Note: 1. VGS=0V 2. ID=250µA Breakdown Voltage Variation vs. Temperature -100 Junction Temperature, TJ (℃) -50 50 100 150 200 3.0 0 2.0 1.0 0.5 0.0 1.5 2.5 On-Resistance Junction Temperature Note: 1. VGS=10V 2. ID=4A 10 1 0.1 Drain-Source Voltage, VDS (V) Drain Current, ID (A) 1 10 100 100µs 1000 10ms DC Maximum Safe Operating Area Drain Current, ID (A) Case Temperature, TC (℃) 75 100 0 25 50 125 2 4 6 8 10 Maximum Drain Current vs. Case Temperature Notes: 1. TJ=25℃ 2. TJ=150℃ 3. Single Pulse 150 Operation in This Area is Limited by RDS(on) 100 1ms 100µs 1 0.1 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve Notes: 1. θJC (t) = 0.85℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) D=0.5 D=0.2 D=0.1 D=0.05 0.02 0.01 Single pulse

8N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed,even m values (such as maxim d all urgs,opera ing condition ranges.o eenUTcepucsareoedesgeiosen9lieuporapianes.G ces or systems where on of these prod xpected to r in perso injury. of th pres d in thi document does not form part of any contract.is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO.,LTD ww.unisonic.com tw OW:R562-115

8N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw QW-R502-115,B UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice