《模拟与数字电路实验》参考资料：元件和实验系统_器件资料_2n3055

MOSPEC COMPLEMENTARY SILICON POWER TRANSISTORS designed for use in general-purpose amplifier and switching NPN PNP pplications 2N3055M2955 FEATURES Power Dissipation-Pp =115W@Tc=25C s DC Current Gain hFE=20-70@Ic=4.0A VcEisa=1.1 V(Max )@=4.0A,B=400 mA 15 AMPERE COMPLEMENTARY SILICON MAXIMUM RATINGS POWER TRANSISTORS Characteristic Symbol Rating Unit 115 WATTS Collector-Emitter Voltage Collector-Emitter Voltage CER Collector-Base Voltage 100 Emitter-Base Voltage VEL 7.0 vVvvA Collector Current-Continuous TO-3 Base Current 70 Total Power Dissipation @Tc=25C P 115 Derate above25°c 0.657 Operating and Storage Junction perature Rang -65to+200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rejc 152 OLLECTOR(CASE FIGURE-1 POWER DERATING DIM L MILLIMETERS D 9210 62 H29903040 255075100125150175200 K10671118 Tc, TEMPERATURE(C

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2N3055 NPN/ MJ2955 PNP ELECTRICAL CHARACTERISTICS (Te=25C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) CEO(SUS) (L=200mAb=0) Collector-Emitter Sustaining Voltage(1) VcER(sUS) (c=200 mA, RBE100 Ohms Collector cutoff current EO (vce=30v,b=0) 0.7 Collector Cutoff Current cg (VcE=100V, VBE(om=1.5V) (vce=100V, VBElom=1.5V,Tc=150C) Emitter Cutoff Current (vg=70v,e=0) ON CHARACTERISTICS (1) DC Current Gain hFE A, VcE=4.0V) (L=10A,vcg=40V) 50 Collector-Emitter Saturation Voltage (L=40A,lB=04A) (=10Al=33A) 3.0 Base-Emitter On voltage BElo (l=4.0AVcg=40V) DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Product(2) MHz (c=500 mA, Vce=10V, f=1.0 MHz) 2.5 Small-Signal Current Gain lc=1.0A Vce40V, f=1 KHz 15 (1)Pulse Test: Pulse width =300 us, Duty Cycle $ 2.0% 2),=|n.fm 2N3055MJ2955 ACTIVE REGION SAFE OPERATING AREA(SOA) There are two limitation on the power handling ability of a transistor average junction temperature and second imits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate he data of SoA curve is base on TxP=200C Tc is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided TJP S200C, At high case temperatures, thermal limita Thermaly Limited Te" C(Sirge Puse) tion will reduce the power that can be handled to values less than the limitations imposed by second breakdow VcE. COLLECTOR EMITTER VOLTAGE MOLTS)

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2N3055 NPN/ MJ2955 PNP NPN 2N3055 PNP MJ2955 DC CURRENT GAIN DC CURRENT GAIN -=150 vc=40 kc, COLLECTOR CURRENT (AMP) Ic COLLECTOR CURRENT (AMP) COLLECTOR SATURATION REGION COLLECTOR SATURATION REGION lc=10 4.0A c=10A 40A Pu-9E 5001000 la, BASE CURRENT (mA) ON" VOLTAGES ON" VOLTAGES 5°c T-25℃ pdu VBE(set) lc/a"10 u=o> VRE VCE4,0V IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

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